Large‐Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202109889
Abstract: Hafnia‐based compounds have considerable potential for use in nanoelectronics due to their compatibility with complementary metal–oxide–semiconductor devices and robust ferroelectricity at nanoscale sizes. However, the unexpected ferroelectricity in this class of compounds often remains elusive… read more here.
Keywords: 5zr0 5o2; large scale; scale hf0; robust ferroelectricity ... See more keywords
Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.201901180
Abstract: After the discovery of ferroelectricity in HfO2, many dopants have been incorporated into the material to improve the ferroelectric properties. The binary mixture of HfO2 and ZrO2, HfxZrx−1O2, showed the widest process window in terms… read more here.
Keywords: bulk depolarization; 5zr0 5o2; hf0 5zr0; fields major ... See more keywords
Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity
Sign Up to like & getrecommendations! Published in 2020 at "Science China Materials"
DOI: 10.1007/s40843-020-1444-1
Abstract: Memristors are designed to mimic the brain’s integrated functions of storage and computing, thus breaking through the von Neumann framework. However, the formation and breaking of the conductive filament inside a conventional memristor is unstable,… read more here.
Keywords: ferroelectric memristor; storage; multilevel storage; hf0 5zr0 ... See more keywords
Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.148737
Abstract: Abstract Due to the full compatibility with modern complementary-metal-oxide-semiconductor (CMOS) technology and scalable capability, HfO2-based ferroelectric films have been considered as the most potential materials in micro-nano non-volatile memories. However, despite great achievements, the existence… read more here.
Keywords: layer; ferroelectricity; hf0 5zr0; ferroelectricity reliability ... See more keywords
Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.028
Abstract: In this work, we report on the electron transport properties of ultrathin (~2.5nm) ferroelectric polycrystalline Hf0.5Zr0.5O2 (HZO) films grown by the Atomic Layer Deposition (ALD) technique directly on the highly doped Si substrate. On the… read more here.
Keywords: electron transport; transport; hzo; ultrathin ferroelectric ... See more keywords
Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.12.008
Abstract: Abstract In this work, the effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films was investigated. The thin films were deposited on (111) Pt-coated SiO2, Si, and CaF2… read more here.
Keywords: thin films; film thickness; hf0 5zr0; film ... See more keywords
Direct observation of reversible oxygen migration and phase transitions in ferroelectric Hf0.5Zr0.5O2 thin-film devices
Sign Up to like & getrecommendations! Published in 2021 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927621003640
Abstract: Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen… read more here.
Keywords: microscopy; reversible oxygen; hf0 5zr0; 5zr0 5o2 ... See more keywords
Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c01066
Abstract: HfO2-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is… read more here.
Keywords: mechanical polarization; 5zr0 5o2; hf0 5zr0; film ... See more keywords
High Quality Factors in Superlattice Ferroelectric Hf0.5Zr0.5O2 Nanoelectromechanical Resonators.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c08414
Abstract: The discovery of ferroelectricity and advances in creating polar structures in atomic-layered hafnia-zirconia (HfxZr1-xO2) films spur the exploration of using the material for novel integrated nanoelectromechanical systems (NEMS). Despite its popularity, the approach to achieving… read more here.
Keywords: 5zr0 5o2; quality factors; hf0 5zr0; nanoelectromechanical resonators ... See more keywords
Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b15110
Abstract: Hf0.5Zr0.5O2 thin films are one of the most appealing HfO2-based ferroelectric thin films, which have been researched extensively for their applications in ferroelectric memory devices. In this work, a 1 mol % La-doped Hf0.5Zr0.5O2 thin… read more here.
Keywords: thin films; hf0 5zr0; film; 5o2 thin ... See more keywords
Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors.
Sign Up to like & getrecommendations! Published in 2019 at "Nanoscale"
DOI: 10.1039/c9nr05904k
Abstract: The emergence of ferroelectricity in nanometer-thick films of doped hafnium oxide (HfO2) makes this material a promising candidate for use in Si-compatible non-volatile memory devices. The switchable polarization of ferroelectric HfO2 controls functional properties of… read more here.
Keywords: electric potential; polarization; hf0 5zr0; memory ... See more keywords