Low–temperature fabrication of HfAlO alloy dielectric using atomic–layer deposition and its application in a low–power device
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DOI: 10.1016/j.jallcom.2019.04.015
Abstract: Abstract This paper presents a systematic study of HfAlO alloy films, which were prepared by doping HfO2 with different amounts of Al using atomic layer deposition at low growth temperature (150 °C). The chemical constituents of… read more here.
Keywords: atomic layer; layer; deposition; layer deposition ... See more keywords