High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET
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DOI: 10.1109/jeds.2017.2778087
Abstract: In this paper, we report on a novel E-mode AlGaN/GaN gates-seperating groove heterostructure field-effect transistor (GSG HFET). The current turn-on/off is controlled by changing gate voltage to regulate the horizontal energy band between the double… read more here.
Keywords: mode algan; hfet; algan gan; drain current ... See more keywords