Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics
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DOI: 10.1016/j.jallcom.2018.05.091
Abstract: Abstract The microstructure, optical and electrical properties of sputtering-derived HfGdO high-k gate dielectric thin films as a function of the Gd doping content have been systematically investigated. X-ray diffraction (XRD) measurements have indicated that Gd… read more here.
Keywords: gate dielectrics; semiconductor; gate; density ... See more keywords