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Published in 2018 at "APL Materials"
DOI: 10.1063/1.5023577
Abstract: The ternary transition-metal chalcogenide HfGeTe4 is found to have a direct band gap of around 1.3 eV in its monolayer form, while it has an indirect band gap of about a half of that value…
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Keywords:
chalcogenide;
hfgete4;
transition metal;
transition ... See more keywords