Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO x -based RRAM devices
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DOI: 10.1088/1361-6528/acc078
Abstract: Y-doping can effectively improve the performance of HfO x -based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y-doping affecting the performance of HfO x -based memristors is still missing and unclear.… read more here.
Keywords: rram devices; spectroscopy; hfo based; impedance ... See more keywords