Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application
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DOI: 10.1088/1361-6641/abf662
Abstract: The Al-doped HfO x flexible resistive random access memory (ReRAM) device with Ag top electrode (TE) is fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) with low thermal budget process. The oxygen vacancies… read more here.
Keywords: ito pet; pet reram; hfo ito; flexible electronics ... See more keywords