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Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2826978
Abstract: A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped p-Si substrate as would be…
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Keywords:
voltage;
sub sub;
hfo sub;
sub ... See more keywords
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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2924038
Abstract: Self-rectifying using a pure HfO2 layer with asymmetric structure was realized in Pt/HfO2/n+-Si resistive random access memory (RRAM). The device exhibits repeatable self-rectifying behavior with high rectifying ratio (>105). The electrostatic effect induced by the…
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Keywords:
sub;
hfo sub;
sup;
self rectifying ... See more keywords
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2
Published in 2017 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2017.2661403
Abstract: Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and…
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Keywords:
improvement;
sub sub;
atomic layer;
hfs sub ... See more keywords