Evaluation of Si:HfO2 Ferroelectric Properties in MFM and MFIS Structures
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2826978
Abstract: A 10.5 nm silicon doped HfO2 film is deposited and examined on three different bottom electrodes: a TiN electrode such as would be found in capacitive FeRAM, a lightly doped p-Si substrate as would be… read more here.
Keywords: voltage; sub sub; hfo sub; sub ... See more keywords
Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2924038
Abstract: Self-rectifying using a pure HfO2 layer with asymmetric structure was realized in Pt/HfO2/n+-Si resistive random access memory (RRAM). The device exhibits repeatable self-rectifying behavior with high rectifying ratio (>105). The electrostatic effect induced by the… read more here.
Keywords: sub; hfo sub; sup; self rectifying ... See more keywords
Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2017.2661403
Abstract: Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and… read more here.
Keywords: improvement; sub sub; atomic layer; hfs sub ... See more keywords