High‐κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐Switching Computing Devices
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials"
DOI: 10.1002/adma.202312747
Abstract: Herein, a high‐quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation is reported, realizing an atomically sharp interface with a suppressed interface trap density (Dit ≈ 5 × 1010 cm−2 eV−1).… read more here.
Keywords: steep switching; hfse2 gate; stack; gate stack ... See more keywords
Ambient Moisture‐Induced Self Alignment of Polarization in Ferroelectric Hafnia
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Science"
DOI: 10.1002/advs.202410354
Abstract: The discovery of nanoscale ferroelectricity in hafnia (HfO2) has paved the way for next generation high‐density, non‐volatile devices. Although the surface conditions of nanoscale HfO2 present one of the fundamental mechanism origins, the impact of… read more here.
Keywords: hafnia; hfo2; moisture induced; ambient moisture ... See more keywords
Modulation of VO2 Metal–Insulator Transition by Ferroelectric HfO2 Gate Insulator
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DOI: 10.1002/aelm.201901356
Abstract: Ferroelectric gating of functional materials has often suffered because ferroelectric materials are poor insulators. In this study, the recently reported ferroelectric HfO2, a large band‐gap oxide with excellent insulating properties, is exploited for electrostatically gating… read more here.
Keywords: hfo2; insulator; metal insulator; insulator transition ... See more keywords
Highly Linear and Symmetric Weight Modification in HfO2‐Based Memristive Devices for High‐Precision Weight Entries
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DOI: 10.1002/aelm.202000434
Abstract: In this study, highly reliable and accurate weight‐modification behaviors are realized using a W/Al2O3 (3 nm)/HfO2 (7 nm)/TiN memristive device. The accuracy of the simulated inference of the MNIST dataset when considering the weight‐modification behavior… read more here.
Keywords: hfo2; linear symmetric; weight modification; modification ... See more keywords
2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps
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DOI: 10.1002/aelm.202100074
Abstract: Among advanced devices with 2D semiconductors, charge injection memory field effect transistors (CIM FETs) may be one of the most important and practical ones. Reported CIM FETs utilize three layers (for tunneling, trapping, and bulk… read more here.
Keywords: hfo2; oxide interface; memory; hetero stack ... See more keywords
Effect of O2- migration in Pt/HfO2/Ti/Pt structure
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electroceramics"
DOI: 10.1007/s10832-017-0077-y
Abstract: In this paper, we study the post-fabrication phenomenon of natural oxidation of the Ti layer observed in a Pt/HfO2/Ti/Pt Resistive Random Access Memory (OxRRAM) stack with no external influence. We identify that the resistance ratio… read more here.
Keywords: resistance ratio; layer; effect; oxrram stack ... See more keywords
Improved thermal stability and contact of antimony film by the interlayer HfO2
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-03345-3
Abstract: The thermal stability was one of the primary obstacles hindering the development of phase-change memory. In this paper, Sb/HfO2 multilayer phase-change films were prepared by multilayer composite method. The transition process of Sb/HfO2 multilayer films… read more here.
Keywords: phase; change; film; hfo2 ... See more keywords
Effect of HfO2 on the dielectric, optoelectronic and energy harvesting properties of PVDF
Sign Up to like & getrecommendations! Published in 2019 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-019-2042-2
Abstract: In this article, energy recovery based on PVDF doped with HfO2 is proposed. The free energy of CH2=CF2 is determined in different base with the B3LPY functional. The basis set LanL2DZ was chosen because it… read more here.
Keywords: energy; text text; properties pvdf; pvdf ... See more keywords
Effect of calcination temperatures on HfO2 fibers via electrospinning
Sign Up to like & getrecommendations! Published in 2020 at "Ceramics International"
DOI: 10.1016/j.ceramint.2020.12.027
Abstract: Abstract Hafnium oxide (HfO2) fibers can be widely used in ultra-high temperature ceramics (UHTCs) as reinforced material in order to achieve better antioxidant performance and less cracks and flaking on surface of UHTCs in field… read more here.
Keywords: thermal shock; temperature; effect calcination; hfo2 ... See more keywords
New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature
Sign Up to like & getrecommendations! Published in 2021 at "Ceramics International"
DOI: 10.1016/j.ceramint.2021.06.212
Abstract: Abstract In this work, ferroelectric properties with a coercive field of 1.6 MV/cm and a remanent polarization of 17.9 μC/cm2 were achieved in Y-doped HfO2 thin films prepared by ion beam assisted RF magnetron sputtering without any… read more here.
Keywords: ion beam; hfo2; new approach; approach fabrication ... See more keywords
Enhanced energy storage capability of P(VDF-HFP) nanodielectrics by HfO2 passivation layer: Preparation, performance and simulation
Sign Up to like & getrecommendations! Published in 2020 at "Composites Science and Technology"
DOI: 10.1016/j.compscitech.2019.107968
Abstract: Abstract Flexible dielectric nanocomposites have shown great potential for electrostatic capacitors due to their excellent energy storage properties. In an effort to eliminate the disadvantages induced by the interfacial polarization of two different components in… read more here.
Keywords: energy; layer; hfo2; hfp ... See more keywords