Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.012
Abstract: Abstract Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states. Polarons in the crystalline phase have small trapping energies of the… read more here.
Keywords: amorphous hfo2; hole trapping; positive charging; hfo2 al2o3 ... See more keywords
Impact of the HfO2/Al2O3 stacking order on unipolar RRAM devices
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.024
Abstract: In this work, Ni/HfO2/Al2O3/n+-Si and Ni/Al2O3/HfO2/n+-Si RRAM devices have been investigated with the purpose to determine the role of the HfO2/Al2O3 stacking order in the electrical properties and the resistive switching phenomena in unipolar RRAM… read more here.
Keywords: hfo2 al2o3; order; rram devices; stacking order ... See more keywords
SiO2-P2O5-HfO2-Al2O3-Na2O glasses activated by Er3+ ions: From bulk sample to planar waveguide fabricated by rf-sputtering
Sign Up to like & getrecommendations! Published in 2017 at "Optical Materials"
DOI: 10.1016/j.optmat.2016.06.025
Abstract: Abstract 0.4 Er3+-doped 90.7 SiO2 – 4.4 P2O5 – 2.3 HfO2 – 1.7 Al2O3 – 0.7 Na2O planar waveguide was fabricated by multi-target rf-sputtering technique starting by massive Er3+-activated P2O5-SiO2-Al2O3-Na2O glass. The optical parameters were… read more here.
Keywords: hfo2 al2o3; al2o3 na2o; al2o3; sio2 p2o5 ... See more keywords
Selective Pulsed Chemical Vapor Deposition of Water-Free TiO2/Al2O3 and HfO2/Al2O3 Nanolaminates on Si and SiO2 in Preference to SiCOH.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c19810
Abstract: Highly selective and smooth TiO2/Al2O3 and HfO2/Al2O3 nanolaminates were deposited by water-free pulsed chemical vapor deposition (CVD) at 300 °C using titanium isopropoxide (Ti(OiPr)4) and hafnium tertbutoxide (Hf(OtBu)4) with trimethylaluminum (TMA). TMA was found to… read more here.
Keywords: deposition; tio2 al2o3; hfo2 al2o3; al2o3 ... See more keywords
Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study
Sign Up to like & getrecommendations! Published in 2022 at "RSC Advances"
DOI: 10.1039/d1ra08103a
Abstract: Atomic Layer Deposition (ALD) was used for a tri-layer structure (HfO2/Al2O3/HfO2) at low temperature over an Indium Tin Oxide (ITO) transparent electrode. First, the microstructure of the fabricated TaN/HfO2/Al2O3/HfO2/ITO RRAM device was examined by the… read more here.
Keywords: resistive switching; hfo2 al2o3; rram; hfo2 ... See more keywords
C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3
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DOI: 10.1063/1.5031183
Abstract: In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100) β-Ga2O3 are investigated through C − V and J − V… read more here.
Keywords: hfo2 al2o3; ga2o3; gate; hfo2 ... See more keywords
Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.4967233
Abstract: The electrical, structural, and chemical properties of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) fabricated on Sb-rich (2 × 5) and Sb-stabilized (1 × 3) surfaces by atomic layer deposition are characterized. A combination of the transmission electron microscopic, x-ray photoelectron spectroscopic,… read more here.
Keywords: hfo2 al2o3; surface; al2o3 gasb; deposition ... See more keywords
Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15186285
Abstract: Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k… read more here.
Keywords: hfo2 al2o3; tunneling oxide; charge storage; charge ... See more keywords