Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-017-3436-3
Abstract: In this paper Hafnium Oxide (HfO2) based cylindrical Junctionless Double Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device performance. HfO2 based CJLDSG MOSFET has been compared with HfO2 based Cylindrical Junctionless… read more here.
Keywords: hfo2 based; cjldsg mosfet; frequency; mosfet ... See more keywords
Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Sign Up to like & getrecommendations! Published in 2017 at "Science China Information Sciences"
DOI: 10.1007/s11432-017-9239-5
Abstract: With the continuously scaling down of semiconductor technology, the traditional SiO2 as gate dielectric is approaching the physical and electrical limits. Some problems, such as the increasing leakage current and reliability issues, seriously affect the… read more here.
Keywords: hfo2 based; gate; total ionizing; ionizing dose ... See more keywords
Enhanced memory properties of HfO2-based ferroelectric capacitor by inserting Al2O3/ZrO2 stack interfacial layer
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0138158
Abstract: HfO2-based ferroelectrics have been regarded as a promising material to integrate into a gate stack of silicon-based field-effect-transistors (FETs). However, a narrower memory window (MW) and poor endurance caused by an undesirable interfacial layer (IL)… read more here.
Keywords: hfo2 based; zro2 stack; stack; memory ... See more keywords
A perspective on the physical scaling down of hafnia-based ferroelectrics
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acb945
Abstract: HfO2-based ferroelectric thin films have attracted significant interest for semiconductor device applications due to their compatibility with complementary metal oxide semiconductor (CMOS) technology. One of the benefits of HfO2-based ferroelectric thin films is their ability… read more here.
Keywords: hfo2 based; hfo2; based ferroelectrics; thin films ... See more keywords
Interface modification of HfO2-based ReRAM via low temperature anneal
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab362a
Abstract: Resistive Random Access Memory (ReRAM) is a novel form of non-volatile memory with a variety of applications ranging from neuromorphic circuits used for artificial intelligence applications, to a potential replacement for flash memory. Each application… read more here.
Keywords: hfo2 based; reram devices; based reram; temperature ... See more keywords
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/44/5/053101
Abstract: The finding of the robust ferroelectricity in HfO2-based thin films is fantastic from the view point of both the fundamentals and the applications. In this review article, the current research status of the future prospects… read more here.
Keywords: hfo2 based; future prospects; status future; ferroelectricity hafnium ... See more keywords
Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2721980
Abstract: HfO2-based resistive RAMs have been irradiated with high-linear energy transfer heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. No relevant changes were observed in the irradiated cells… read more here.
Keywords: simulation studies; irradiation; experimental simulation; effects heavy ... See more keywords
Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
Sign Up to like & getrecommendations! Published in 2022 at "Science"
DOI: 10.1126/science.abk3195
Abstract: Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO2)–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues… read more here.
Keywords: hfo2 based; ion bombardment; ion; ferroelectricity ... See more keywords
Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15062251
Abstract: Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of… read more here.
Keywords: hfo2 based; doped hfo2; tunnel junctions; memory ... See more keywords
Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15217475
Abstract: The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current–voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused… read more here.
Keywords: hfo2 based; noise; metal ferroelectric; based metal ... See more keywords
SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14030571
Abstract: The counter-electrode (CE) material in electrochemical metallization memory (ECM) cells plays a crucial role in the switching process by affecting the reactions at the CE/electrolyte interface. This is due to the different electrocatalytic activity of… read more here.
Keywords: hfo2 based; counter electrode; diffusive memristors; kinetics hfo2 ... See more keywords