Stabilizing Schottky‐to‐Ohmic Switching in HfO2‐Based Ferroelectric Films via Electrode Design
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Science"
DOI: 10.1002/advs.202409566
Abstract: The discovery of ferroelectric phases in HfO2‐based films has reignited interest in ferroelectrics and their application in resistive switching (RS) devices. This study investigates the pivotal role of electrodes in facilitating the Schottky‐to‐Ohmic transition (SOT)… read more here.
Keywords: schottky ohmic; based ferroelectric; stabilizing schottky; hfo2 based ... See more keywords
Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-017-3436-3
Abstract: In this paper Hafnium Oxide (HfO2) based cylindrical Junctionless Double Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device performance. HfO2 based CJLDSG MOSFET has been compared with HfO2 based Cylindrical Junctionless… read more here.
Keywords: hfo2 based; cjldsg mosfet; frequency; mosfet ... See more keywords
Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Sign Up to like & getrecommendations! Published in 2017 at "Science China Information Sciences"
DOI: 10.1007/s11432-017-9239-5
Abstract: With the continuously scaling down of semiconductor technology, the traditional SiO2 as gate dielectric is approaching the physical and electrical limits. Some problems, such as the increasing leakage current and reliability issues, seriously affect the… read more here.
Keywords: hfo2 based; gate; total ionizing; ionizing dose ... See more keywords
Enhanced memory properties of HfO2-based ferroelectric capacitor by inserting Al2O3/ZrO2 stack interfacial layer
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0138158
Abstract: HfO2-based ferroelectrics have been regarded as a promising material to integrate into a gate stack of silicon-based field-effect-transistors (FETs). However, a narrower memory window (MW) and poor endurance caused by an undesirable interfacial layer (IL)… read more here.
Keywords: hfo2 based; zro2 stack; stack; memory ... See more keywords
Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors
Sign Up to like & getrecommendations! Published in 2024 at "APL Materials"
DOI: 10.1063/5.0184042
Abstract: HfO2-based ferroelectric field-effect transistors (FeFETs) are regarded as one of the most promising non-volatile memory technologies in the future. However, the charge trapping phenomenon during the program/erase operation is still a challenge. In this work,… read more here.
Keywords: charge trapping; hfo2 based; interface charge; polarization ... See more keywords
The physical origin of inhomogeneous field within HfO2-based ferroelectric capacitor
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0195170
Abstract: In this work, the origins of the inhomogeneous field within the HfO2-based ferroelectric (FE) capacitor are investigated. We propose a model to simulate the relationship between the reversed polarization and the applied pulses with different… read more here.
Keywords: field; field within; based ferroelectric; hfo2 based ... See more keywords
A perspective on the physical scaling down of hafnia-based ferroelectrics
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acb945
Abstract: HfO2-based ferroelectric thin films have attracted significant interest for semiconductor device applications due to their compatibility with complementary metal oxide semiconductor (CMOS) technology. One of the benefits of HfO2-based ferroelectric thin films is their ability… read more here.
Keywords: hfo2 based; hfo2; based ferroelectrics; thin films ... See more keywords
Interface modification of HfO2-based ReRAM via low temperature anneal
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab362a
Abstract: Resistive Random Access Memory (ReRAM) is a novel form of non-volatile memory with a variety of applications ranging from neuromorphic circuits used for artificial intelligence applications, to a potential replacement for flash memory. Each application… read more here.
Keywords: hfo2 based; reram devices; based reram; temperature ... See more keywords
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/44/5/053101
Abstract: The finding of the robust ferroelectricity in HfO2-based thin films is fantastic from the view point of both the fundamentals and the applications. In this review article, the current research status of the future prospects… read more here.
Keywords: hfo2 based; future prospects; status future; ferroelectricity hafnium ... See more keywords
Defect Dynamics in Silicon-Doped HfO2-Based Front-End-of-Line FeFETs: Insights From Low-Frequency Noise on Doping Concentration, Interfaces, and Write Cycling
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3564270
Abstract: This article comprehensively examines the defect distribution and dynamics through low-frequency noise (LFN) characteristics in hafnium-oxide (HfO2)-based ferroelectric field-effect transistors (FeFETs). We delve into the intricate effects of varying silicon (Si) doping levels of the… read more here.
Keywords: write cycling; hfo2 based; frequency noise; silicon ... See more keywords
Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2721980
Abstract: HfO2-based resistive RAMs have been irradiated with high-linear energy transfer heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. No relevant changes were observed in the irradiated cells… read more here.
Keywords: simulation studies; irradiation; experimental simulation; effects heavy ... See more keywords