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Published in 2018 at "Ceramics International"
DOI: 10.1016/j.ceramint.2018.04.093
Abstract: Abstract 10 nm-thick ferroelectric (FE) HfO2 films with 1.5 mol% yttrium-doping were fabricated by mid-frequency reactive magnetron co-sputtering deposition on bare Si and underlying metal Hf. Yttrium was incorporated into the HfO2 layers by simultaneously sputtering from…
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Keywords:
doped hfo2;
effects buffer;
layer;
buffer layer ... See more keywords
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Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b19558
Abstract: HfO2-based unconventional ferroelectric materials were recently discovered and have attracted a great deal of attention in both academia and industry. The growth of epitaxial Si-doped HfO2 films has opened up a route to understand the…
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Keywords:
doped hfo2;
ferroelectricity epitaxial;
microscopy;
epitaxial doped ... See more keywords
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Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5097880
Abstract: Ferroelectricity has been demonstrated in polycrystalline 7%Y-doped HfO2 (YHO7) films with thicknesses ranging from 10 to 930 nm, which were grown on (111)Pt/TiOx/SiO2/(001)Si substrates by pulsed laser deposition at room temperature and subsequent annealing at 1000 °C.…
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Keywords:
films around;
yho7 films;
yo1 hfo2;
around thickness ... See more keywords
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Published in 2022 at "Frontiers in Chemistry"
DOI: 10.3389/fchem.2022.859023
Abstract: Hafnium oxide (HfO2) films on silicon have the potential for application in photovoltaic devices. However, very little is known about the photoelectrochemical and protective properties of HfO2 films on Si. In this study, ultrathin films…
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Keywords:
hfo2 films;
hafnium oxide;
silicon passivation;
film ... See more keywords