Wafer-scale graphene-ferroelectric HfO2/Ge-HfO2/HfO2 transistors acting as three-terminal memristors.
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DOI: 10.1088/1361-6528/abb2bf
Abstract: In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge-HfO2/HfO2 three-layer structure. This kind of transistor has a switching… read more here.
Keywords: wafer scale; graphene; three terminal; ferroelectric hfo2 ... See more keywords