Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric
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DOI: 10.1038/srep40669
Abstract: Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally… read more here.
Keywords: interface states; hfo2 high; mos2 hfo2; interface ... See more keywords