Ferroelectricity in Lu doped HfO2 layers
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4998336
Abstract: Doped HfO2 has become a promising candidate for non-volatile memory devices since it can be easily integrated into existing CMOS technology. Many dopants like Y, Gd, and Sr have been investigated for the stabilization of… read more here.
Keywords: doped hfo2; voltage; polarization; ferroelectricity doped ... See more keywords
Ion Drift and Polarization in Thin SiO2 and HfO2 Layers Inserted in Silicon on Sapphire
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12193394
Abstract: To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a thickness of 50–310 nm and HfO2 layers with… read more here.
Keywords: hfo2 layers; ion drift; sapphire; inserted silicon ... See more keywords