Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b06204
Abstract: The electronic properties of the HfO2/MoS2 interface were investigated using multifrequency capacitance-voltage (C-V) and current-voltage characterization of top-gated MoS2 metal-oxide-semiconductor field effect transistors (MOSFETs). The analysis was performed on few layer (5-10) MoS2 MOSFETs fabricated… read more here.
Keywords: top gated; interface; hfo2 mos2; spectroscopy ... See more keywords