Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing.
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DOI: 10.1021/acsami.2c12247
Abstract: The switching characteristics and performance of oxide-based memristors are predominately determined by oxygen- or oxygen-vacancy-mediated redox reactions and the consequent formation of conducting filaments (CFs). Devices using oxide thin films as the switching layer usually… read more here.
Keywords: conductance; highly linear; conductance modulation; hfo2 nanorod ... See more keywords