Improving interfacial and electrical properties of HfO2/SiO2/p-Si stacks with N2-plasma-treated SiO2 interfacial layer
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DOI: 10.1007/s12598-017-0958-x
Abstract: The effect of N2-plasma-treated SiO2 interfacial layer on the interfacial and electrical characteristics of HfO2/SiO2/p-Si stacks grown by atomic layer deposition (ALD) was investigated. The microstructure and interfacial chemical bonding configuration of the HfO2/SiO2/Si stacks… read more here.
Keywords: hfo2 sio2; treatment; plasma treatment; sio2 interfacial ... See more keywords
Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
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DOI: 10.1063/5.0015348
Abstract: In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V)… read more here.
Keywords: stack; hfo2 sio2; atomic layer; interface dipole ... See more keywords
Synergistic effects in MOS capacitors with an Au/HfO2–SiO2/Si structure irradiated with neutron and gamma ray
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ac3ce8
Abstract: The properties of oxide trapped charges and interface state density in the metal oxide semiconductor (MOS) capacitors with an Au/HfO2–SiO2/Si structure were investigated under irradiation of 14 MeV neutron and 60Co gamma-ray. In the mixed… read more here.
Keywords: mos capacitors; sio2 structure; capacitors hfo2; hfo2 sio2 ... See more keywords