Optimizing Annealing Process for Ferroelectric Y‐Doped HfO2 Thin Films by All‐Inorganic Aqueous Precursor Solution
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000585
Abstract: 10 nm thick yttrium doped HfO2 (Y:HfO2) thin films are prepared on Si (100) substrates by the chemical solution deposition method using all‐inorganic aqueous salt precursors. The influence of the annealing process, consisting of annealing… read more here.
Keywords: thin films; hfo2 thin; doped hfo2; inorganic aqueous ... See more keywords
Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films
Sign Up to like & getrecommendations! Published in 2020 at "Nano Energy"
DOI: 10.1016/j.nanoen.2020.104733
Abstract: Abstract Pyroelectric coefficients are measured for Si, Sr, La, Al, and Gd doped HfO2 thin films as well as the solid-solution Hf0.5Zr0.5O2 composition from 280 to 440 K. Pyroelectric currents show sensitivity to the dopant used… read more here.
Keywords: hfo2 thin; thin films; ferroelectric hfo2; curie constant ... See more keywords
Ferroelectric properties of HfO2 nanodots with a diameter smaller than 10 nm deposited on an ITO bottom electrode
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0024938
Abstract: HfO2 nanodots and epitaxial HfO2 thin films with ferroelectric properties were grown on yttria-stabilized zirconia substrates with indium tin oxide bottom electrodes via a pulsed laser deposition (PLD) method. The crystallinity and ferroelectric properties of… read more here.
Keywords: hfo2 thin; epitaxial hfo2; thin films; ferroelectric properties ... See more keywords
Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac7cf7
Abstract: An investigation was conducted with regard to the effect of etching process on the ferroelectric (FE) characteristics of different device structures with Al-doped HfO2 thin films; further, the effect of the rapid thermal annealing temperature… read more here.
Keywords: doped hfo2; annealing temperature; process; etching process ... See more keywords
High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO2 Thin Film with Non-Identical Pulse Waveforms
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12183252
Abstract: We enhanced the device uniformity for reliable memory performances by increasing the device surface roughness by exposing the HfO2 thin film surface to argon (Ar) plasma. The results showed significant improvements in electrical and synaptic… read more here.
Keywords: non identical; accuracy; linearity; identical pulse ... See more keywords
Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices
Sign Up to like & getrecommendations! Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13111785
Abstract: Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding… read more here.
Keywords: charge; thin films; charge trapping; memory ... See more keywords