Switching-behavior improvement in HfO2/ZnO bilayer memory devices by tailoring of interfacial and microstructural characteristics
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DOI: 10.1088/1361-6528/ac5e70
Abstract: We investigated the effect of top contact interface and microstructural characteristics of the insulating layers on resistive switching behaviors by fabricating and characterizing the HfO2/ZnO bilayer heterostructures. Different thickness of ZnO underlying layer and different… read more here.
Keywords: zno bilayer; hfo2 zno; microstructural characteristics; zno ... See more keywords