Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM
Sign Up to like & getrecommendations! Published in 2018 at "Solid State Ionics"
DOI: 10.1016/j.ssi.2018.08.003
Abstract: Abstract Hybrid CBRAM devices based on PVP/HfOx bilayer were investigated for their switching performance. A reliable and low voltage bipolar resistive switching operation was observed in these devices with repeatability of 300 cycles, Ion/Ioff of 80,… read more here.
Keywords: hfox; switching pvp; investigation resistive; bilayer ... See more keywords
Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Chemistry C"
DOI: 10.1039/c8tc00899j
Abstract: We proposed a simple method, a thermally purified solution (TPS) process, to lower the fabrication temperature of solution-processed hafnium oxide (HfOx) gate insulator films. The TPS process is proceeded by transferring thermal energy to the… read more here.
Keywords: solution processed; hfox; process; solution ... See more keywords
Optimization of oxygen vacancy concentration in HfO2/HfOx bilayer-structured ultrathin memristors by atomic layer deposition and their biological synaptic behavior
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc02494e
Abstract: HfOx-based resistive random-access memory devices have shown great potential in next-generation non-volatile memory devices, but they are not optimized as synaptic devices for neuromorphic systems. In this paper, the fabrication and biological synaptic behavior of… read more here.
Keywords: hfo2 hfox; oxygen vacancy; hfox; biological synaptic ... See more keywords
Realizing Performance Balance by Band Offset and Defect Concentration Engineering in HfOx/ZrOy Self-Rectifying Memristor
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2025.3578071
Abstract: High-performance self-rectifying memristor (SRM) is an ideal candidate for in-memory computing (IMC). On-off ratio, nonlinearity (NL), and on-current of SRM are the key metrics for IMC hardware implementation. Here, we propose an SRM optimization method… read more here.
Keywords: performance; tex math; hfox; inline formula ... See more keywords
Improvement of the Stability of Quantum-Dot Light Emitting Diodes Using Inorganic HfOx Hole Transport Layer
Sign Up to like & getrecommendations! Published in 2024 at "Materials"
DOI: 10.3390/ma17194739
Abstract: One of the major challenges in QLED research is improving the stability of the devices. In this study, we fabricated all inorganic quantum-dot light emitting diodes (QLEDs) using hafnium oxide (HfOx) as the hole transport… read more here.
Keywords: quantum dot; emitting diodes; stability; dot light ... See more keywords
Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfOx-Based Memristive Devices
Sign Up to like & getrecommendations! Published in 2019 at "Nanomaterials"
DOI: 10.3390/nano9101355
Abstract: Oxygen ions’ migration is the fundamental resistive switching (RS) mechanism of the binary metal oxides-based memristive devices, and recent studies have found that the RS performance can be enhanced through appropriate oxygen plasma treatment (OPT).… read more here.
Keywords: oxygen; resistive switching; memristive devices; hfox ... See more keywords