Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM
Sign Up to like & getrecommendations! Published in 2018 at "Solid State Ionics"
DOI: 10.1016/j.ssi.2018.08.003
Abstract: Abstract Hybrid CBRAM devices based on PVP/HfOx bilayer were investigated for their switching performance. A reliable and low voltage bipolar resistive switching operation was observed in these devices with repeatability of 300 cycles, Ion/Ioff of 80,… read more here.
Keywords: hfox; switching pvp; investigation resistive; bilayer ... See more keywords
Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Chemistry C"
DOI: 10.1039/c8tc00899j
Abstract: We proposed a simple method, a thermally purified solution (TPS) process, to lower the fabrication temperature of solution-processed hafnium oxide (HfOx) gate insulator films. The TPS process is proceeded by transferring thermal energy to the… read more here.
Keywords: solution processed; hfox; process; solution ... See more keywords
Optimization of oxygen vacancy concentration in HfO2/HfOx bilayer-structured ultrathin memristors by atomic layer deposition and their biological synaptic behavior
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc02494e
Abstract: HfOx-based resistive random-access memory devices have shown great potential in next-generation non-volatile memory devices, but they are not optimized as synaptic devices for neuromorphic systems. In this paper, the fabrication and biological synaptic behavior of… read more here.
Keywords: hfo2 hfox; oxygen vacancy; hfox; biological synaptic ... See more keywords
Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfOx-Based Memristive Devices
Sign Up to like & getrecommendations! Published in 2019 at "Nanomaterials"
DOI: 10.3390/nano9101355
Abstract: Oxygen ions’ migration is the fundamental resistive switching (RS) mechanism of the binary metal oxides-based memristive devices, and recent studies have found that the RS performance can be enhanced through appropriate oxygen plasma treatment (OPT).… read more here.
Keywords: oxygen; resistive switching; memristive devices; hfox ... See more keywords