Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202209925
Abstract: HfOx‐based memristor has been studied extensively as one of the most promising memories for the excellent nonvolatile data storage and computing‐in‐memory capabilities. However, the resistive switching mechanism, relying on the formation and rupture of conductive… read more here.
Keywords: conductive filaments; reconstruction conductive; based memristor; hfox based ... See more keywords
Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses
Sign Up to like & getrecommendations! Published in 2017 at "Advanced electronic materials"
DOI: 10.1002/aelm.201700263
Abstract: Ultrafast switching is an attractive performance for resistive random access memory (RRAM) as one of the next-generation nonvolatile memory options. A high-speed measurement setup is designed and constructed to characterize the RESET operation of HfOx-based… read more here.
Keywords: sub nanosecond; hfox based; based rram;
In-Depth Physical Mechanism Analysis and Wearable Applications of HfOx-Based Flexible Memristors.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c16569
Abstract: Since memristors as an emerging nonlinear electronic component have been considered the most promising candidate for integrating nonvolatile memory and advanced computing technology, the in-depth reveal of the memristive mechanism and the realization of hardware… read more here.
Keywords: mechanism analysis; physical mechanism; hfox based; mechanism ... See more keywords
Dynamic conductance characteristics in HfOx-based resistive random access memory
Sign Up to like & getrecommendations! Published in 2017 at "RSC Advances"
DOI: 10.1039/c7ra00567a
Abstract: Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results… read more here.
Keywords: dynamic conductance; characteristics hfox; hfox based; based resistive ... See more keywords
Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2016.2643162
Abstract: HfOx-based resistive switching device has been explored as one of the promising candidates for the electronic synapses of neuromorphic computing systems due to its high performance, low cost, and compatibility with CMOS technology. To meet… read more here.
Keywords: based electronic; compact model; neuromorphic computing; hfox based ... See more keywords