Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2
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DOI: 10.1109/tnano.2017.2661403
Abstract: Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and… read more here.
Keywords: improvement; sub sub; atomic layer; hfs sub ... See more keywords