Raman intensity enhancement of molecules adsorbed onto HfS2 flakes up to 200 layers.
Sign Up to like & getrecommendations! Published in 2019 at "Nanoscale"
DOI: 10.1039/c8nr07185c
Abstract: Newly emerging two-dimensional transition metal dichalcogenide HfS2 has received considerable attention recently due to its ultrahigh photoresponsivity, well-balanced carrier mobility and an appropriate band gap which offer potential in electronic and optoelectronic devices. In this… read more here.
Keywords: hfs2; raman; flakes 200; 200 layers ... See more keywords
High performance and gate-controlled GeSe/HfS2 negative differential resistance device
Sign Up to like & getrecommendations! Published in 2022 at "RSC Advances"
DOI: 10.1039/d1ra07276e
Abstract: Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current–voltage (Ids–Vds) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are… read more here.
Keywords: negative differential; gese hfs2; high performance; hfs2 ... See more keywords