High‐κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐Switching Computing Devices
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DOI: 10.1002/adma.202312747
Abstract: Herein, a high‐quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation is reported, realizing an atomically sharp interface with a suppressed interface trap density (Dit ≈ 5 × 1010 cm−2 eV−1).… read more here.
Keywords: steep switching; hfse2 gate; stack; gate stack ... See more keywords