Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films through Interfacial Bound Charges
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201900554
Abstract: The negative capacitance (NC) effect in ferroelectric materials provides a possible solution to break the Boltzmann tyranny and realize steep‐slope field‐effect transistors (FETs) with sub‐60 mV dec−1 subthreshold slope (SS). HfO2‐based ferroelectrics (FE) have attracted… read more here.
Keywords: thin films; polarization; landscape; hfxzr1 xo2 ... See more keywords
Effect of the Hf content on the microstructure and ferroelectric properties of HfxZr1-xO2 thin films using an all-inorganic aqueous precursor solution.
Sign Up to like & getrecommendations! Published in 2021 at "Nanoscale"
DOI: 10.1039/d1nr02667d
Abstract: The synthesis of ferroelectric HfxZr1-xO2 (0 ≤ x ≤ 0.50) thin films by chemical solution deposition (CSD) on the surface of Si (100) substrates using all-inorganic salt precursors, is demonstrated in this study. The effects… read more here.
Keywords: thin films; xo2; hfxzr1 xo2; xo2 thin ... See more keywords
Thermodynamic control of ferroelectric-phase formation in HfxZr1−xO2 and ZrO2
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5028181
Abstract: Since ferroelectric HfxZr1−xO2 is different from other ferroelectric doped-HfO2 materials in terms of the dopant sensitivity of the formation of a ferroelectric phase, the mechanism of formation of a ferroelectric phase is investigated in comparison… read more here.
Keywords: hfxzr1 xo2; phase; formation; ferroelectric phase ... See more keywords
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3268179
Abstract: We fabricated FeRAM and FeFET with a bilayer HfxZr1-xO2 (HZO), which comprises 5-nm-thick antiferroelectric HZO and 5-nm-thick ferroelectric HZO. Higher orthorhombic phase and large grain size were shown in grazing-incidence x-ray diffraction and TEM results,… read more here.
Keywords: layer deposition; leakage current; atomic layer; feram fefet ... See more keywords