Bipolar conductivity in ferroelectric La:HfZrO films
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0050748
Abstract: Lanthanum-doped HfZrO is considered as the ferroelectric material for capacitor structures used in one-transistor-one capacitor nonvolatile memory cells for the development of new generation nonvolatile random-access memory. Here, different capacitor structures are characterized by x-ray… read more here.
Keywords: capacitor structures; conductivity; bipolar conductivity; hfzro ... See more keywords
Wafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors.
Sign Up to like & getrecommendations! Published in 2018 at "Nanotechnology"
DOI: 10.1088/1361-6528/aad75e
Abstract: We have fabricated and electrically characterized at the wafer scale tens of metal-ferroelectric (HfZrO)-semiconductor capacitors and metal-graphene monolayer-ferroelectric (HfZrO)-semiconductor capacitors with the same top electrode dimensions. We have found that the memory windows of the… read more here.
Keywords: graphene monolayer; hfzro; ferroelectric capacitors; memory windows ... See more keywords
Graphene bandgap induced by ferroelectric HfO2 doped with Zr (HfZrO).
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab814b
Abstract: e show experimentally that the ferroelectric HfZrO induces a bandgap of 0.18 eV in graphene monolayer. The experiments are performed on top-gate graphene/HfZrO transistors showing a very high transconductance of 1 mS and very carrier… read more here.
Keywords: bandgap induced; ferroelectric hfo2; graphene bandgap; hfzro ... See more keywords