Controlled Dislocations Injection in N/P Hg1−xCdxTe Photodiodes by Indentations
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07139-0
Abstract: HgCdTe (MCT) is a widely used semiconductor material used for manufacturing high-quality infrared detectors. At Sofradir, HgCdTe is grown by liquid phase epitaxy on lattice-matched CdZnTe substrates. Low threading dislocation densities (TDD) in the low… read more here.
Keywords: controlled dislocations; dislocations injection; xcdxte photodiodes; injection hg1 ... See more keywords
Interface properties of MIS structures based on hetero-epitaxial graded-gap Hg 1-x Cd x Te with CdTe interlayer created in situ during MBE growth
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.08.025
Abstract: Abstract Heterostructures based on n-Hg1-xCdxTe (x = 0.23–0.40) with near-surface graded-gap layers were grown by molecular beam epitaxy on Si (013) substrates. At 77 K, the admittance of the In/Al2O3/Hg1-xCdxTe metal-insulator-semiconductor (MIS) structures with grown in situ CdTe… read more here.
Keywords: hg1 xcdxte; graded gap; cdte; mis structures ... See more keywords
Non-local terahertz photoconductivity in the topological phase of Hg1-xCdxTe.
Sign Up to like & getrecommendations! Published in 2021 at "Scientific reports"
DOI: 10.1038/s41598-021-81099-6
Abstract: We report on observation of strong non-local photoconducitivity induced by terahertz laser pulses in non-zero magnetic field in heterostructures based on Hg1-xCdxTe films being in the topological phase. While the zero-field non-local photoconductivity is negligible,… read more here.
Keywords: non local; local terahertz; terahertz photoconductivity; topological phase ... See more keywords
Mobility of Two-Electron Conduction in Narrow-Gap n-type Hg1–xCdxTe Structures
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2871270
Abstract: A simple method for computation of the electron mobility in n-type doped Hg1–xCdxTe structures is proposed. The method is based on the postulate of the existence of donor bands. In our model, the donor bands… read more here.
Keywords: mobility; xcdxte structures; type; hg1 xcdxte ... See more keywords