Articles with "hgcdte" as a keyword



Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density

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Published in 2017 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-017-5586-6

Abstract: Ultra-low-doped mercury cadmium telluride (HgCdTe, or MCT) is of significant interest for infrared detectors designed to suppress Auger recombination. Measurement of low doping levels in multi-layered structures is difficult with traditional 4-point Hall effect measurements.… read more here.

Keywords: field hall; low doping; hall effect; hgcdte ... See more keywords

HgCdTe mid-Infrared photo response enhanced by monolithically integrated meta-lenses

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Published in 2020 at "Scientific Reports"

DOI: 10.1038/s41598-020-62433-w

Abstract: Polarization-independent dielectric meta-lens is proposed to monolithically integrate with a HgCdTe infrared photodetector to concentrate power flux into a reduced photosensitive area for performance enhancement. Although a reduction in photosensitive area could suppress the dark… read more here.

Keywords: meta lens; response; hgcdte; meta ... See more keywords

Revealing the influence of annealing on mid- and long-wave infrared dual-color HgCdTe p-n junctions at the nanometer scale.

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Published in 2025 at "Nanoscale"

DOI: 10.1039/d5nr00996k

Abstract: Doping and activation in HgCdTe to form p-n junctions are prerequisites for achieving superior infrared detection performance. This process is complex and highly sensitive to heat treatment. Comprehensive understanding of this procedure is often impeded… read more here.

Keywords: color hgcdte; wave infrared; hgcdte; dual color ... See more keywords

Disclosing the carrier distributions in ion-implanted HgCdTe p–n junctions with scanning capacitance microscopy

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Published in 2024 at "AIP Advances"

DOI: 10.1063/5.0202951

Abstract: Ion implantation doping is the primary method for forming p–n junctions in HgCdTe. However, the doping and activation in HgCdTe are influenced by various complex factors, leading to inconsistencies between the actual carriers and the… read more here.

Keywords: distribution; capacitance microscopy; hgcdte; carrier ... See more keywords

Influencing Sources for Dark Current Transport and Avalanche Mechanisms in Planar and Mesa HgCdTe p-i-n Electron-Avalanche Photodiodes

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Published in 2018 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2017.2783352

Abstract: In this paper, both planar and mesa homojunction p-i-n HgCdTe electron-avalanche photodiodes (e-APDs) are fabricated and investigated to better understand the dark current transport and electron-avalanche mechanisms of the devices and optimize the structures. The… read more here.

Keywords: planar mesa; avalanche; hgcdte; dark current ... See more keywords
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Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas

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Published in 2020 at "Journal of Vacuum Science and Technology"

DOI: 10.1116/6.0000397

Abstract: Our interest in introducing oxygen and/or nitrogen atoms in CH4/H2/Ar plasma mixtures by means of organic precursors in the place of CH4 or by partly substituting O2 or N2O for H2 and thereby controlling carbon… read more here.

Keywords: carbon; microscopy; plasma mixtures; hgcdte ... See more keywords

Mid-infrared stimulated emission in HgCdTe/CdHgTe quantum well heterostructures at room temperature

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Published in 2020 at "Optical Engineering"

DOI: 10.1117/1.oe.60.8.082006

Abstract: Abstract. Heterostructures with quantum wells (QWs) based on HgCdTe are promising systems for making compact semiconductor sources of the mid-infrared range. This range has paramount practical importance due to the presence of absorption lines of… read more here.

Keywords: mid infrared; hgcdte; emission hgcdte; room temperature ... See more keywords

Mid-wave infrared multispectral imaging with HgCdTe photodetector.

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Published in 2025 at "Optics express"

DOI: 10.1364/oe.567467

Abstract: Multispectral imaging, which combines spatial and spectral resolution, enables accurate identification of materials and structures based on their characteristic absorption or reflection spectra, particularly in the infrared range. Despite its broad application potential, the development… read more here.

Keywords: multispectral imaging; hgcdte; wave infrared; mid wave ... See more keywords

Thin active region HgCdTe-based quantum cascade laser with quasi-relativistic dispersion law.

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Published in 2022 at "Optics letters"

DOI: 10.1364/ol.470688

Abstract: HgCdTe is promising as a material to solve a problem of the development of semiconductor sources with an operational frequency range of 6-10 THz due to the small optical phonon energies and electron effective mass. In… read more here.

Keywords: quantum cascade; thin active; cascade laser; hgcdte based ... See more keywords