HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Communications Technology and Electronics"
DOI: 10.1134/s1064226920030122
Abstract: Abstract Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 × 512 elements at a pitch of 25 μm with a long-wavelength sensitivity of 5 μm at half maximum… read more here.
Keywords: 640 512; photodetector; based 640; 512 elements ... See more keywords
Thin active region HgCdTe-based quantum cascade laser with quasi-relativistic dispersion law.
Sign Up to like & getrecommendations! Published in 2022 at "Optics letters"
DOI: 10.1364/ol.470688
Abstract: HgCdTe is promising as a material to solve a problem of the development of semiconductor sources with an operational frequency range of 6-10 THz due to the small optical phonon energies and electron effective mass. In… read more here.
Keywords: quantum cascade; thin active; cascade laser; hgcdte based ... See more keywords