Temperature Dependence of the Defect States in LWIR (100) and (111)B HgCdTe Epilayers for IR HOT Detectors
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DOI: 10.1007/s11664-024-11229-z
Abstract: HgCdTe epilayers grown by chemical vapor deposition (MOCVD) on GaAs substrates operating in the long-wave infrared range were characterized by the photoluminescence (PL) method. Photodiode and photoconductor designs, both (100) and (111)B crystallographic, were analyzed.… read more here.
Keywords: 100 111; hgcdte epilayers; defect states; temperature dependence ... See more keywords