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1
Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00660-6
Abstract: This paper assesses the electrical performance of a metal-insulator-semiconductor (MIS) solar cell designed by using different high-k dielectrics. The study is aimed to achieve the optimized device geometrical dimensions while improving the quantum mechanical tunnelling…
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Keywords:
high dielectrics;
performance metal;
insulator semiconductor;
cell ... See more keywords
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1
Published in 2019 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2019.06.192
Abstract: Abstract Continuous, uniform, and sub-10 nm Al2O3 high-K dielectrics upon two-dimensional exfoliated multilayer MoTe2 are realized by atomic layer deposition (ALD) based on a nucleation layer (NL) prepared by the ozone-based process, interfacial AlN, and low-temperature…
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Keywords:
sub;
uniform sub;
atomic layer;
layer deposition ... See more keywords
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Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.03.025
Abstract: Abstract We report promising results regarding the possible use of AlN or Al2O3 as a gate dielectric in 4H-SiC MISFETs. The crystalline AlN films are grown by hot wall metal organic chemical vapor deposition (MOCVD)…
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Keywords:
al2o3;
electrical characterization;
aln al2o3;
characterization high ... See more keywords
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2
Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.07.021
Abstract: Abstract We investigate monolayer Transition Metal Dichalcogenides (TMDs) of type MX 2 (MoS 2 , MoSe 2 , MoTe 2 , WS 2 and WSe 2 ) 10 nm n-channel Metal Oxide Semiconductor Field Effect Transistors…
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Keywords:
transconductance high;
high dielectrics;
dielectrics monolayer;
monolayer channel ... See more keywords
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0
Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b00538
Abstract: Regardless of the application, MoS2 requires encapsulation or passivation with a high-quality dielectric, whether as an integral aspect of the device (as with top-gated field-effect transistors (FETs)) or for protection from ambient conditions. However, the…
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Keywords:
high dielectrics;
atomic layer;
uniform growth;
layer deposition ... See more keywords
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Published in 2017 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.4974920
Abstract: In a companion article, the etch characteristics of materials within the Si-C-O-N-H system were surveyed using two common fluorinated plasma etches used to etch SiO2 interlayer dielectrics and SiN:H etch stop layers (CHF3 and CF4/O2,…
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Keywords:
high dielectrics;
etch stop;
optical lithography;
etch ... See more keywords