Regioregular Narrow-Bandgap n-Type Polymers with High Electron Mobility Enabling Highly Efficient All-Polymer Solar Cells.
Sign Up to like & getrecommendations! Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202102635
Abstract: Narrow-bandgap n-type polymers with high electron mobility are urgently demanded for the development of all-polymer solar cells (all-PSCs). Here, two regioregular narrow-bandgap polymer acceptors, L15 and MBTI, with two electron-deficient segments are synthesized by copolymerizing… read more here.
Keywords: bandgap; polymer; high electron; narrow bandgap ... See more keywords
Cyano-Functionalized n-Type Polymer with High Electron Mobility for High-Performance Organic Electrochemical Transistors.
Sign Up to like & getrecommendations! Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202201340
Abstract: n-Type organic mixed ionic-electronic conductors (OMIECs) with high electron mobility are scarce and highly challenging to develop. As a result, the figure-of-merit (μC*) of n-type organic electrochemical transistors (OECTs) lags far behind the p-type analogs,… read more here.
Keywords: electron mobility; high electron; polymer; type ... See more keywords
Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202211738
Abstract: Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges… read more here.
Keywords: contact; high electron; gan high; ti3c2tx mxene ... See more keywords
Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202202019
Abstract: The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet… read more here.
Keywords: algan gan; mobility transistor; high electron; gan high ... See more keywords
Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-018-3903-5
Abstract: This paper aims to characterize two high electron mobility transistors analyzed with sapphire and 4H-SiC substrate. Comparison of the two structures are carried out in terms of threshold voltage (Vt), maximum drain current (ID), transconductance… read more here.
Keywords: sic substrate; sapphire; sapphire sic; high electron ... See more keywords
InP/ZnS quantum dots functionalized AlGaAs/InGaAs open gate high electron mobility transistor
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-018-9134-9
Abstract: The InP/ZnS quantum dots were employed to modify the gate area of AlGaAs/InGaAs high electron mobility transistor. The charge distribution state in the quantum dots would affect the surface potential of the high electron mobility… read more here.
Keywords: mobility transistor; high electron; quantum dots; electron mobility ... See more keywords
Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors
Sign Up to like & getrecommendations! Published in 2017 at "Electronic Materials Letters"
DOI: 10.1007/s13391-017-1606-1
Abstract: A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum drain current (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and a maximum transconductance (gm,max) of 190 mS/mm at drain-source voltage… read more here.
Keywords: dependent characteristics; gan high; alinn gan; high electron ... See more keywords
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
Sign Up to like & getrecommendations! Published in 2018 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2018.07.015
Abstract: Abstract This paper reviews the rapid advancements being made in the development of high electron mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) and terahertz (300 GHz to 3.5 THz) frequency applications. The… read more here.
Keywords: frequency; inp hemts; high electron; mobility transistors ... See more keywords
Electronic and mechanical property of high electron mobility semiconductor Bi2O2Se
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.06.120
Abstract: Abstract Using first-principles calculations combined with a semi-empirical van der Waals dispersion correction, we have investigated the structural, electronic and mechanical properties of Bi2O2Se. We predict that Bi2O2Se is a semiconductor with a band gap… read more here.
Keywords: electronic mechanical; semiconductor; high electron; property high ... See more keywords
Diferulate: A highly effective electron donor
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electroanalytical Chemistry"
DOI: 10.1016/j.jelechem.2020.113950
Abstract: Abstract The screening of new molecules with high electron-donor properties is important for the design of new bioactive and technologically applicable substances. Here we propose diferulate (1), (Z)-2-(5-((E)-2-carboxyvinyl)-2-hydroxy-3-methoxyphenyl)-3-(4-hydroxy-3-methoxyphenyl)acrylic acid, to be an efficient electron donor… read more here.
Keywords: electron donor; donor; high electron; highly effective ... See more keywords
A single chip electron spin resonance detector based on a single high electron mobility transistor.
Sign Up to like & getrecommendations! Published in 2018 at "Journal of magnetic resonance"
DOI: 10.1016/j.jmr.2018.07.002
Abstract: Single-chip microwave oscillators are promising devices for inductive electron spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter samples. Two major problems of the previously reported designs were the large minimum microwave magnetic field (0.1-0.7 mT)… read more here.
Keywords: single chip; detector; high electron; spin ... See more keywords