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Published in 2020 at "Analog Integrated Circuits and Signal Processing"
DOI: 10.1007/s10470-020-01702-0
Abstract: Reading the memristor memory cell without changing its resistance state is one of the potential problems to be addressed in the memristor-based memory design. This paper presents a novel read scheme that achieves a non-destructive…
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Keywords:
memristor;
high endurance;
read scheme;
power ... See more keywords
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Published in 2020 at "Chemical Physics Letters"
DOI: 10.1016/j.cplett.2019.137040
Abstract: Abstract A bipolar resistive switching characterizes in Pt/LaNiO3/0.2%Nb:SrZrO3/Cu (Pt/LNO/Nb:SZO/Cu) structure was investigated, as the Cu and LNO layers were employed as the capping and buffering layers, respectively. Interestingly, the bistable bipolar switching characteristic was achieved…
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Keywords:
high endurance;
lanio3 srzro3;
endurance bipolar;
resistive switching ... See more keywords
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Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c00083
Abstract: Electrically switchable magnetic and electronic properties are promising for quantum sensing and information technology. Here, we report an electrically driven magnetic and electronic phase transition in molecular electronic crystal, potassium-7,7,8,8-tetracyanoquinodimethan, with the magneto-electric switching over…
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Keywords:
crystal;
magneto;
molecular electronic;
high endurance ... See more keywords
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Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0256127
Abstract: In this paper, we report a high endurance and low coercive voltage (Vc) ferroelectric tunnel junction (FTJ) device by replacing the TiN top electrode with W electrode after annealing. This method implants a TiNOx thin…
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Keywords:
low coercive;
coercive voltage;
endurance;
high endurance ... See more keywords
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Published in 2024 at "Science"
DOI: 10.1126/science.adp3575
Abstract: The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor…
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Keywords:
sliding ferroelectrics;
memory;
based sliding;
polarization ... See more keywords
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Published in 2021 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-021-03585-0
Abstract: Threshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such…
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Keywords:
threshold switching;
cross point;
high endurance;
selector ... See more keywords