A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er2 O3 Insulator Through Thermal Evaporation.
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DOI: 10.1002/smll.202207394
Abstract: Achieving the direct growth of an ultrathin gate insulator with high uniformity and high quality on monolayer transition metal dichalcogenides (TMDCs) remains a challenge due to the chemically inert surface of TMDCs. Although the main… read more here.
Keywords: thermal evaporation; er2; high er2; mos2 ... See more keywords