Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.104933
Abstract: Abstract A layer-by-layer, in-situ H2 plasma treatment in each cycle of atomic layer deposition, referred to as “atomic layer hydrogen bombardment” (ALHB), is applied to improve electrical properties of ZrO2 high-k gate dielectrics. The H2… read more here.
Keywords: gate dielectrics; layer; atomic layer; high gate ... See more keywords
Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack
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DOI: 10.3390/mi9120674
Abstract: This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived… read more here.
Keywords: inse; mobility; high gate; phonon ... See more keywords