Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3022888
Abstract: In this letter, a new silicon-controlled rectifier (SCR) structure fabricated using 4H-SiC materials has been proposed and investigated. The proposed structure alleviates the strong-snapback phenomenon that occurs in the 4H-SiC SCR and demonstrates low trigger… read more here.
Keywords: holding voltage; voltage; controlled rectifier; topology ... See more keywords
A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.3022897
Abstract: Dual-direction electrostatic discharge (ESD) protection devices can discharge both positive and negative ESD surges, owing to their excellent area efficiency. This study proposes a novel dual-direction MOSFET ESD protection device with a high holding voltage.… read more here.
Keywords: high holding; esd; holding voltage; esd protection ... See more keywords