High dv/dt Noise Modeling and Reduction on Control Circuits of GaN-Based Full Bridge Inverters
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DOI: 10.1109/tpel.2019.2903818
Abstract: Wide bandgap semiconductor devices allow higher switching frequency and switching speed for their superior characteristics. However, the ultra-fast switching speed causes severe high dv/dt noise in power conversion systems. High dv/dt induced common mode noise… read more here.
Keywords: italic italic; full bridge; control circuits; based full ... See more keywords