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Published in 2017 at "Current Applied Physics"
DOI: 10.1016/j.cap.2017.11.015
Abstract: Abstract The novel material selection and fabrication became a major concern due to scaling limitations when the technology node was below 20 nm. Complex gate-last process step for high-k metal gate (HKMG) device was proposed to…
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Keywords:
material lattice;
gate;
metal gate;
high metal ... See more keywords
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Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.041
Abstract: Abstract Ultra-thin interfacial silicon oxide layers are grown by microwave-based plasma oxidation at temperatures below 200 °C. The influence of plasma gas composition and plasma pulsing on layer properties is tested. The oxides are compared to…
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Keywords:
ultra thin;
high metal;
microwave based;
plasma oxidation ... See more keywords
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1
Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.04.024
Abstract: Abstract This paper presented findings on statistical impact of mole fraction (x) on threshold voltage, on current, and off current in high-k/metal gate SiGe channel Tunnel FET (TFET) due to work function variability (WFV) of…
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Keywords:
metal gate;
gate;
high metal;
grain ... See more keywords
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Published in 2023 at "Inorganic chemistry"
DOI: 10.1021/acs.inorgchem.3c00886
Abstract: Atomically monodispersed intermetallic catalysts comprising highly accessible active sites are ideal heterogeneous catalytic materials. Designing such types of nanocatalysts on carbonaceous supports with high loading, however, remains a formidable challenge. Demonstrated herein is an effective…
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Keywords:
supports high;
intermetallic nanoparticles;
nanoparticles supports;
metal loading ... See more keywords
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1
Published in 2018 at "RSC Advances"
DOI: 10.1039/c7ra13290e
Abstract: Particulate matter (PM) is becoming an increasing health concern and there is a need to develop detection methods to keep its harmful effects in check. Generation of reactive oxygen species (ROS) by PM is often…
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Keywords:
peptide probe;
metal content;
high metal;
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1
Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4978357
Abstract: A significant degradation of the mobility has been repeatedly observed at low inversion density in high-κ/metal gate metal-oxide-semiconductor field-effect transistors. However, the scattering mechanisms responsible for this degradation are still debated. It is often assumed…
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Keywords:
carrier scattering;
metal;
sio2 hfo2;
metal gate ... See more keywords