Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
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DOI: 10.1364/prj.391075
Abstract: The electrical and structural properties of V/Al-based n-contacts on n‐AlxGa1−xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated. Ohmic n-contacts are obtained up to x=0.75 with a contact resistivity of… read more here.
Keywords: high mole; mole fraction; properties microstructure; based contacts ... See more keywords