Effects of high in-situ source/drain boron doping in p-FinFETs on physical and device performance characteristics
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.03.007
Abstract: Abstract In this study, the effects of high in-situ boron (B) doping in embedded source/drain (S/D) silicon germanium (SiGe) stressor of p-channel Fin Field Effect Transistors (FinFETs) in a 14 nm technology node were investigated. The… read more here.
Keywords: effects high; high situ; boron doping; spectroscopy ... See more keywords
Machine Learning in Conventional Tunnel Deformation in High In Situ Stress Regions
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DOI: 10.3390/sym14030513
Abstract: Deformation prediction of extremely high in situ stress in soft-rock tunnels is a complex problem involving many parameters, and traditional analytical solutions and numerical simulations have difficulty achieving satisfactory results. This paper proposes the MIC-LSTM… read more here.
Keywords: tunnel deformation; tunnel; high situ; deformation ... See more keywords