High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W
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DOI: 10.1088/1674-4926/41/3/032901
Abstract: A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission, and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated. Special pretreatment and passivation for the chip facets were performed… read more here.
Keywords: laser; wall plug; high wall; power ... See more keywords