InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
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DOI: 10.1134/s1063785019110075
Abstract: A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs… read more here.
Keywords: higher breakdown; high electron; inalas ingaas; breakdown characteristics ... See more keywords