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Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000434
Abstract: In this study, highly reliable and accurate weight‐modification behaviors are realized using a W/Al2O3 (3 nm)/HfO2 (7 nm)/TiN memristive device. The accuracy of the simulated inference of the MNIST dataset when considering the weight‐modification behavior…
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Keywords:
hfo2;
linear symmetric;
weight modification;
modification ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c12247
Abstract: The switching characteristics and performance of oxide-based memristors are predominately determined by oxygen- or oxygen-vacancy-mediated redox reactions and the consequent formation of conducting filaments (CFs). Devices using oxide thin films as the switching layer usually…
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Keywords:
conductance;
highly linear;
conductance modulation;
hfo2 nanorod ... See more keywords
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Published in 2018 at "Electronics Letters"
DOI: 10.1049/el.2018.0780
Abstract: A highly linear folded-type up-conversion mixer working at 10 GHz is presented. The mixer utilises a feedback loop to linearise the gm stage and make the effective gm only determined by a resistor theoretically. Moreover,…
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Keywords:
conversion mixer;
linear conversion;
ghz highly;
highly linear ... See more keywords
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Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2019.3141
Abstract: A 12 b 50 MS/s successive-approximation register (SAR) ADC with a highly linear C-R hybrid DAC is presented. The proposed DAC significantly reduces the required total number of unit capacitors by processing the upper bits…
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Keywords:
dac;
range;
sar adc;
linear hybrid ... See more keywords