LAUSR

Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors

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1 Published in 2020 at "IEEE Electron Device Letters"

DOI: 10.1109/led.2020.3028339

Abstract: In this work, we demonstrate highly scaled, non-volatile memory transistors with ferroelectric Zr-doped HfO2(HZO) as gate insulator. ${\Omega }$ -gate transistors with gate length ~30 nm and width ~85 nm were fabricated on ~20 nm… read more here.

Keywords: tex math; memory; memory transistors; inline formula ... See more keywords