Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.02.012
Abstract: Abstract A large amount of huge hexagonal hillocks were observed on the surface of N-polar GaN film grown on c-plane sapphire substrate by MOCVD. The distribution of residual stress and dislocation density in a typical… read more here.
Keywords: polar gan; grown plane; hillock; residual stress ... See more keywords
Carrier-Transport Study of Gallium Arsenide Hillock Defects
Sign Up to like & getrecommendations! Published in 2019 at "Microscopy and Microanalysis"
DOI: 10.1017/s1431927619014909
Abstract: Abstract Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In… read more here.
Keywords: gallium arsenide; microscopy; transport; hillock defects ... See more keywords
Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0005484
Abstract: The integration of GaN on Si as large scale substrates still faces many hurdles. Besides the large difference in the lattice constant and the high thermal mismatch existing between GaN and Si, spiral hillock growth… read more here.
Keywords: heterostructures grown; formation; gan algan; hillock ... See more keywords