Carrier-Transport Study of Gallium Arsenide Hillock Defects
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DOI: 10.1017/s1431927619014909
Abstract: Abstract Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In… read more here.
Keywords: gallium arsenide; microscopy; transport; hillock defects ... See more keywords