Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1136-6
Abstract: Tunneling field-effect transistor (TFET) suffers from ultra-sharp doping concentration gradients in both the source/channel junction and drain/channel junction. Recently, the junctionless (JL) TFET device has been proposed to avoid the issue of ultra-sharp doping concentration… read more here.
Keywords: gasb hjl; hjl tfet; hjl; gaas gasb ... See more keywords
Designing a hetrostructure junctionless-field effect transistor (HJL-FET) for high-speed applications
Sign Up to like & getrecommendations! Published in 2017 at "Journal of the Korean Physical Society"
DOI: 10.3938/jkps.71.275
Abstract: This paper explores the impacts of both the strained silicon layer thickness, D, and germanium mole fraction, X, on the electrical characteristics of a heterostructure junctionless (HJL)-FET by a numerical simulator. The gate controllability on… read more here.
Keywords: junctionless; layer; hjl; hjl fet ... See more keywords