Designing a hetrostructure junctionless-field effect transistor (HJL-FET) for high-speed applications
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DOI: 10.3938/jkps.71.275
Abstract: This paper explores the impacts of both the strained silicon layer thickness, D, and germanium mole fraction, X, on the electrical characteristics of a heterostructure junctionless (HJL)-FET by a numerical simulator. The gate controllability on… read more here.
Keywords: junctionless; layer; hjl; hjl fet ... See more keywords