Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies
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DOI: 10.1007/s10825-018-1136-6
Abstract: Tunneling field-effect transistor (TFET) suffers from ultra-sharp doping concentration gradients in both the source/channel junction and drain/channel junction. Recently, the junctionless (JL) TFET device has been proposed to avoid the issue of ultra-sharp doping concentration… read more here.
Keywords: gasb hjl; hjl tfet; hjl; gaas gasb ... See more keywords